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1. general description the SA58671 is a stereo, ?lter-free class-d audio ampli?er which is available in a 16 bump wlcsp (wafer level chip-size package). the SA58671 features independent shutdown controls for each channel. the gain can be set at 6 db, 12 db, 18 db or 24 db using g0 and g1 gain select pins. improved immunity to noise and rf recti?cation is increased by high psrr and differential circuit topology. fast start-up time and very small wlcsp package makes it an ideal choice for both cellular handsets and pdas. the SA58671 delivers 1.3 w/channel at 5 v and 720 mw/channel at 3.6 v into 8 w . it delivers 1.2 w/channel at 5 v into 4 w . the maximum power ef?ciency is excellent at 70 % to 74 % into 4 w and 84 % to 88 % into 8 w . the SA58671 provides thermal and short-circuit shutdown protection. 2. features n output power: u 1.2 w/channel into 4 w at 5 v u 1.3 w/channel into 8 w at 5 v u 720 mw/channel into 8 w at 3.6 v n supply voltage: 2.5 v to 5.5 v n independent shutdown control for each channel n selectable gain: 6 db, 12 db, 18 db and 24 db n high svrr: - 77 db at 217 hz n fast start-up time: 3.5 ms n low supply current n low shutdown current n short-circuit and thermal protection n space savings with 2.06 mm 2.11 mm 16 bump wlcsp package n low junction to ambient thermal resistance of 110 k/w with adequate heat sinking of wlcsp 3. applications n wireless and cellular handsets and pda n portable dvd player n usb speaker n notebook pc SA58671 1.2 w/channel stereo class-d audio ampli?er rev. 01 21 december 2007 product data sheet
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 2 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er n portable radio and gaming n educational toy 4. ordering information 5. block diagram table 1. ordering information type number package name description version SA58671uk wlcsp16 wafer level chip-size package; 16 bumps; 2.06 2.11 0.6 mm SA58671uk refer to t ab le 6 for gain selection. fig 1. block diagram 001aah390 SA58671 sdr inrp inrn gain adjust right input pwm h- bridge outrp outrn pvdd internal oscillator inlp inln d1 c1 a1 b3 b4 b2 c2 b1 gain adjust left input pwm h- bridge outlp outln g0 g1 300 k w sdl 300 k w bias circuitry pgnd avdd agnd d3 d4 a2 a3 a4 c4 d2 c3 short-circuit protection
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 3 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 6. pinning information 6.1 pinning 6.2 pin description transparent top view. fig 2. pin con?guration for wlcsp16 fig 3. bump mapping for wlcsp16 001aah181 SA58671uk transparent top view d b c a 24 13 bump a1 index area inlp pvdd outlp outln 1234 inln g1 sdr sdl a b inrn g0 agnd pgnd c inrp outrp outrn d avdd 002aac868 table 2. pin description symbol pin description inlp a1 left channel positive input inln b1 left channel negative input inrn c1 right channel negative input inrp d1 right channel positive input pvdd a2 power supply voltage (level same as avdd) g1 b2 gain select input 1 g0 c2 gain select input 0 avdd d2 analog supply voltage (level same as pvdd) outlp a3 left channel positive output sdr b3 right channel shutdown input (active low) agnd c3 analog ground outrp d3 right channel positive output outln a4 left channel negative output sdl b4 left channel shutdown input (active low) pgnd c4 power ground outrn d4 right channel negative output
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 4 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 7. limiting values [1] v dd is the supply voltage on pin pvdd and pin avdd. table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v dd supply voltage active mode [1] - 0.3 +6.0 v shutdown mode - 0.3 +7.0 v v i input voltage - 0.3 v dd + 0.3 v p power dissipation derating factor 9.12 mw/k t amb =25 c - 1.2 w t amb =75 c - 690 mw t amb =85 c - 600 mw t amb ambient temperature operating in free air - 40 +85 c t j junction temperature operating - 40 +150 c t stg storage temperature - 65 +85 c
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 5 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 8. static characteristics table 4. static characteristics t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit v dd supply voltage operating 2.5 - 5.5 v | v o(offset) | output offset voltage measured differentially; inputs ac grounded; g v(cl) = 6 db; v dd = 2.5 v to 5.5 v - 5 25 mv psrr power supply rejection ratio v dd = 2.5 v to 5.5 v - - 75 - 55 db v i(cm) common-mode input voltage 0.5 - v dd - 0.8 v cmrr common mode rejection ratio inputs are shorted together; v dd = 2.5 v to 5.5 v - - 69 - 50 db v ih high-level input voltage v dd = 2.5 v to 5.5 v; pins sdl, sdr, g0, g1 1.3 - v dd v v il low-level input voltage v dd = 2.5 v to 5.5 v; pins sdl, sdr, g0, g1 0 - 0.35 v i ih high-level input current v dd = 5.5 v; v i =v dd --50 m a i il low-level input current v dd = 5.5 v; v i =0v --5 m a i dd supply current v dd = 5.5 v; no load - 6 9 ma v dd = 3.6 v; no load - 5 7.5 ma v dd = 2.5 v; no load - 4 6 ma r dson drain-source on-state resistance v dd = 5.5 v - 500 - m w v dd = 3.6 v - 570 - m w v dd = 2.5 v - 700 - m w z o(sd) shutdown mode output impedance v sdr = v sdl = 0.35 v - 2 - k w f sw switching frequency v dd = 2.5 v to 5.5 v 250 300 350 khz g v(cl) closed-loop voltage gain v g0 = v g1 = 0.35 v 5.5 6 6.5 db v g0 = v dd ; v g1 = 0.35 v 11.5 12 12.5 db v g0 = 0.35 v; v g1 = v dd 17.5 18 18.5 db v g0 = v g1 = v dd 23.5 24 24.5 db
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 6 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 9. dynamic characteristics table 5. dynamic characteristics t amb =25 c; r l =8 w ; unless otherwise speci?ed. symbol parameter conditions min typ max unit p o output power per channel; f = 1 khz; thd+n = 10 % r l =8 w ; v dd = 5.0 v - 1.3 - w r l =8 w ; v dd = 3.6 v - 0.72 - w r l =4 w ; v dd = 5.0 v - 1.2 - w thd+n total harmonic distortion-plus-noise v dd = 5.0 v; g v(cl) = 6 db; f=1khz p o = 1 w - 0.14 - % p o = 0.5 w - 0.11 - % svrr supply voltage ripple rejection g v(cl) = 6 db; f = 217 hz v dd = 5.0 v - - 77 - db v dd = 3.6 v - - 73 - db cmrr common mode rejection ratio v dd = 5.0 v; g v(cl) = 6 db; f = 217 hz - - 69 - db z i input impedance g v(cl) = 6 db - 28.1 - k w g v(cl) = 12 db - 17.3 - k w g v(cl) = 18 db - 9.8 - k w g v(cl) = 24 db - 5.2 - k w t d(sd-startup) delay time from shutdown to start-up v dd = 3.6 v - 3.5 - ms v n(o) output noise voltage v dd = 3.6 v; f = 20 hz to 20 khz; inputs are ac grounded no weighting - 35 - m v a weighting - 27 - m v
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 7 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 10. typical performance curves (1) v dd = 3.6 v; l channel to r channel (2) v dd = 3.6 v; r channel to l channel (3) v dd = 5.0 v; l channel to r channel (4) v dd = 5.0 v; r channel to l channel fig 4. crosstalk (stepped all-to-one) as a function of frequency (1) left channel (2) right channel fig 5. rms output noise voltage as a function of frequency 001aah165 f (hz) 10 3 10 5 10 4 - 100 - 80 - 60 a ct (db) - 120 (3) (2) (1) (4) 001aah164 f (hz) 10 10 5 10 4 10 2 10 3 10 - 4 10 - 5 10 - 3 v n(o) (v) 10 -6 (1) (2)
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 8 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er a. r l = 8 w b. r l = 4 w (1) v dd = 2.5 v (2) v dd = 3.6 v (3) v dd = 5.0 v fig 6. total harmonic distortion-plus-noise as a function of output power; g v(cl) = 6 db 001aah167 p o (w) 10 - 5 10 1 10 - 1 10 - 4 10 - 2 10 - 3 10 - 1 1 10 10 2 thd+n (%) 10 - 2 (1) (2) (3) 001aah168 p o (w) 10 - 5 10 1 10 - 1 10 - 4 10 - 2 10 - 3 10 - 1 1 10 10 2 thd+n (%) 10 - 2 (1) (2) (3)
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 9 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er a. v dd = 3.0 v b. v dd = 3.6 v c. v dd = 4.2 v (1) f i = 1 khz (2) f i = 3 khz (3) f i = 5 khz fig 7. total harmonic distortion-plus-noise as a function of output power; r l = 8 w ; g v(cl) = 6 db 001aah170 p o (w) 10 - 5 110 10 - 1 10 - 2 10 - 4 10 - 3 1 10 - 1 10 thd+n (%) 10 - 2 (1) (2) (3) 001aah169 p o (w) 10 - 5 110 10 - 1 10 - 2 10 - 4 10 - 3 1 10 - 1 10 thd+n (%) 10 - 2 (1) (2) (3) 001aah171 p o (w) 10 - 5 110 10 - 1 10 - 2 10 - 4 10 - 3 1 10 - 1 10 thd+n (%) 10 - 2 (1) (2) (3)
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 10 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er a. r l = 8 w b. r l = 4 w (1) v i = 900 mv (2) v i = 725 mv (3) v i = 525 mv fig 8. total harmonic distortion-plus-noise as a function of frequency; v dd = 3.6 v 001aah172 f (hz) 10 10 5 10 4 10 2 10 3 1 10 - 1 10 thd+n (%) 10 - 2 (1) (2) (3) 001aah173 f (hz) 10 10 5 10 4 10 2 10 3 1 10 - 1 10 thd+n (%) 10 - 2 (2) (1) (3)
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 11 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er a. channel 1 b. channel 2 fig 9. fft spectrum as a function of frequency; f i = 1 khz; v i = 0 db; v dd = 3.6 v; r l =8 w 001aah174 f (khz) 0 16 20 12 48 - 140 - 20 - 60 - 100 20 fft (db) 001aah556 f (khz) 0 16 20 12 48 - 140 - 20 - 60 - 100 20 fft (db)
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 12 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er a. channel 1 b. channel 2 fig 10. fft spectrum as a function of frequency; f i = 1 khz; v i = - 10 db; v dd = 3.6 v; r l =8 w 001aah175 f (khz) 0 16 20 12 48 - 140 - 20 - 60 - 100 20 fft (db) 001aah557 f (khz) 0 16 20 12 48 - 140 - 20 - 60 - 100 20 fft (db)
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 13 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er a. channel 1 b. channel 2 fig 11. fft spectrum as a function of frequency; f i = 1 khz; v i = - 20 db; v dd = 3.6 v; r l =8 w 001aah176 f (khz) 0 16 20 12 48 - 140 - 20 - 60 - 100 20 fft (db) 001aah558 f (khz) 0 16 20 12 48 - 140 - 20 - 60 - 100 20 fft (db)
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 14 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er a. v i = 0 db b. v i = - 10 db c. v i = - 20 db fig 12. fft spectrum as a function of frequency; f i = 3 khz; v dd = 3.6 v; r l =8 w 001aah391 f (khz) 024 16 8 - 60 - 100 - 20 +20 - 140 fft (db) 001aah392 f (khz) 024 16 8 - 60 - 100 - 20 +20 - 140 fft (db) 001aah393 f (khz) 024 16 8 - 60 - 100 - 20 +20 - 140 fft (db)
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 15 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er a. r l =4 w b. r l =8 w (1) v dd = 3.6 v (2) v dd = 5.0 v fig 13. output power ef?ciency as a function of output power 001aah177 0 60 40 20 80 h po (%) p o (w) 0 2.0 1.6 0.8 1.2 0.4 (1) (2) 001aah179 40 60 20 80 100 h po (%) 0 p o (w) 0 1.6 1.2 0.4 0.8 (1) (2) a. r l =4 w b. r l =8 w (1) v dd = 3.6 v (2) v dd = 5.0 v fig 14. power dissipation as a function of output power 001aah178 0.4 0.6 0.2 0.8 1.0 p (w) 0 p o (w) 0 2.0 1.6 0.8 1.2 0.4 (1) (2) 0 0.3 0.2 0.1 0.4 p (w) p o (w) 0 1.6 1.2 0.4 0.8 001aah573 (1) (2)
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 16 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 11. application information 11.1 power supply decoupling considerations the SA58671 is a stereo class-d audio ampli?er that requires proper power supply decoupling to ensure the rated performance for thd+n and power ef?ciency. to decouple high frequency transients, power supply spikes and digital noise on the power bus line, a low equivalent series resistance (esr) capacitor of typically 1 m f is placed as close as possible to the pvdd pins of the device. it is important to place the decoupling capacitor at the power pins of the device because any resistance or inductance in the pcb trace between the device and the capacitor can cause a loss in ef?ciency. additional decoupling using a larger capacitor, 4.7 m f or greater, may be done on the power supply connection on the pcb to ?lter low frequency signals. usually this is not required due to high psrr of the device. 11.2 input capacitor selection the SA58671 does not require input coupling capacitors when used with a differential audio source that is biased from 0.5 v to v dd - 0.8 v. in other words, the input signal must be biased within the common-mode input voltage range. if high pass ?ltering is required or if it is driven using a single-ended source, input coupling capacitors are required. the 3 db cut-off frequency created by the input coupling capacitor and the input resistors (see t ab le 6 ) is calculated by equation 1 : (1) fig 15. SA58671 application schematic 001aah394 SA58671 outrp outrn 10 m f 1 nf 1 nf fb fb 1 nf 1 nf outlp outln v dd g1 v dd pvdd pgnd 1 m f v dd 10 m f 1 m f v dd sdl sdr avdd g0 inlp 1 m f inln 1 m f differential inputs left channel inrn 1 m f inrp 1 m f differential inputs right channel agnd fb fb f 3db C 1 2 p r i c i ----------------------------- - =
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 17 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er since the value of the input decoupling capacitor and the input resistance determined by the gain setting affects the low frequency performance of the audio ampli?er, it is important to consider this during the system design. small speakers in wireless and cellular phones usually do not respond well to low frequency signals, so the 3 db cut-off frequency may be increased to block the low frequency signals to the speakers. not using input coupling capacitors may increase the output offset voltage. equation 1 is solved for c i : (2) 11.3 pcb layout considerations component location is very important for performance of the SA58671. place all external components very close to the device. placing decoupling capacitors directly at the power supply pins increases ef?ciency because the resistance and inductance in the trace between the device power supply pins and the decoupling capacitor causes a loss in power ef?ciency. the trace width and routing are also very important for power output and noise considerations. for high current terminals (pvdd, pgnd and audio output), the trace widths should be maximized to ensure proper performance and output power. use at least 500 m m wide traces. for the input pins (inrp, inrn, inlp and inln), the traces must be symmetrical and run side-by-side to maximize common-mode cancellation. 11.4 filter-free operation and ferrite bead ?lters a ferrite bead low-pass ?lter can be used to reduce radio frequency emissions in applications that have circuits sensitive to frequencies greater than 1 mhz. a ferrite bead low-pass ?lter functions well for ampli?ers that must pass fcc unintentional radiation requirements for frequencies greater than 30 mhz. choose a bead with high-impedance at high frequencies and very low-impedance at low frequencies. in order to prevent distortion of the output signal, select a ferrite bead with adequate current rating. for applications in which there are circuits that are emi sensitive to low frequency (< 1 mhz) and there are long leads from ampli?er to speaker, it is necessary to use an lc output ?lter. table 6. gain selection g1 g0 gain (v/v) gain (db) input impedance (k w ) low low 2 6 28.1 low high 4 12 17.3 high low 8 18 9.8 high high 16 24 5.2 c i 1 2 p r i f 3db C -------------------------------------- =
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 18 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 11.5 ef?ciency and thermal considerations the maximum ambient temperature depends on the heat transferring ability of the heat spreader on the pcb layout. in t ab le 3 limiting v alues , power dissipation, the power derating factor is given as 9.12 mw/k. the device thermal resistance, r th(j-a) is the reciprocal of the power derating factor. convert the power derating factor to r th(j-a) by equation 3 : (3) for a maximum allowable junction temperature, t j = 150 c and r th(j-a) = 110 k/w and a maximum device dissipation of 0.6 w (300 mw per channel) and for 1.2 w per channel output power, 4 w load, 5 v supply, the maximum ambient temperature is calculated using equation 4 : (4) the maximum ambient temperature is 84 c at maximum power dissipation for 5 v supply and 4 w load. if the junction temperature of the SA58671 rises above 150 c, the thermal protection circuitry turns the device off; this prevents damage to ic. using speakers greater than 4 w further enhances thermal performance and battery lifetime by reducing the output load current and increasing ampli?er ef?ciency. 11.6 additional thermal information the SA58671 16 bump wlcsp package ground bumps are soldered directly to the pcb heat spreader. by the use of thermal vias, the bumps may be soldered directly to a ground plane or special heat sinking layer designed into the pcb. the thickness and area of the heat spreader may be maximized to optimize heat transfer and achieve lowest package thermal resistance. 12. test information r th j - a () 1 derating factor ----------------------------------------- - 1 0.00912 ------------------- 110 k / w === t amb max () t j max () r th j - a () p max () C 150 110 0.60 () C 84 c === fig 16. test circuit 002aad417 power supply + - inxp inxn outxp outxn 15 m h 15 m h dut r l aux0025 30 khz low-pass filter ap585 measurement inputs ap585 audio analyzer
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 19 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 13. package outline fig 17. package outline wlcsp16 references outline version european projection issue date iec jedec jeita SA58671uk SA58671uk 07-10-11 07-10-17 unit a max mm 0.64 0.26 0.22 0.38 0.34 2.08 2.04 2.13 2.09 0.5 1.5 0.01 0.04 a 1 dimensions (mm are the original dimensions) wlcsp16: wafer level chip-size package; 16 bumps; 2.06 x 2.11 x 0.6 mm 0 1 2 mm scale a 2 b 0.34 0.30 d e e e 1 e 2 1.5 v w y 0.02 c y x a b c d 24 13 b e 2 e 1 e e 1/2 e 1/2 e a c b ? v m c ? w m bump a1 index area b a d e detail x a a 2 a 1
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 20 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 14. soldering this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 surface mount re?ow soldering description . 14.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electrical circuits. the soldered joint provides both the mechanical and the electrical connection. there is no single soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for ?ne pitch smds. re?ow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 14.2 wave and re?ow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. the re?ow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature pro?le. leaded packages, packages with solder balls, and leadless packages are all re?ow solderable. key characteristics in both wave and re?ow soldering are: ? board speci?cations, including the board ?nish, solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivity level of the packages ? package placement ? inspection and repair ? lead-free soldering versus pbsn soldering 14.3 wave soldering key characteristics in wave soldering are: ? process issues, such as application of adhesive and ?ux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath speci?cations, including temperature and impurities
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 21 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 14.4 re?ow soldering key characteristics in re?ow soldering are: ? lead-free versus snpb soldering; note that a lead-free re?ow process usually leads to higher minimum peak temperatures (see figure 18 ) than a pbsn process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? re?ow temperature pro?le; this pro?le includes preheat, re?ow (in which the board is heated to the peak temperature) and cooling down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classi?ed in accordance with t ab le 7 and 8 moisture sensitivity precautions, as indicated on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during re?ow soldering, see figure 18 . table 7. snpb eutectic process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 3 350 < 2.5 235 220 3 2.5 220 220 table 8. lead-free process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 22 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er for further information on temperature pro?les, refer to application note an10365 surface mount re?ow soldering description . 15. abbreviations 16. revision history msl: moisture sensitivity level fig 18. temperature pro?les for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature table 9. abbreviations acronym description dut device under test dvd digital video disc emi electromagnetic interference esr equivalent series resistance fft fast fourier transform lc inductor-capacitor ?lter pc personal computer pcb printed-circuit board pda personal digital assistant psrr power supply rejection ratio pwm pulse width modulator usb universal serial bus wlcsp wafer level chip-size package table 10. revision history document id release date data sheet status change notice supersedes SA58671_1 20071221 product data sheet - -
SA58671_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 21 december 2007 23 of 24 nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er 17. legal information 17.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 17.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 17.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 17.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 18. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors SA58671 1.2 w/channel stereo class-d audio ampli?er ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 21 december 2007 document identifier: SA58671_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 19. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 static characteristics. . . . . . . . . . . . . . . . . . . . . 5 9 dynamic characteristics . . . . . . . . . . . . . . . . . . 6 10 typical performance curves . . . . . . . . . . . . . . . 7 11 application information. . . . . . . . . . . . . . . . . . 16 11.1 power supply decoupling considerations . . . . 16 11.2 input capacitor selection . . . . . . . . . . . . . . . . . 16 11.3 pcb layout considerations . . . . . . . . . . . . . . . 17 11.4 filter-free operation and ferrite bead ?lters. . . 17 11.5 ef?ciency and thermal considerations . . . . . . 18 11.6 additional thermal information . . . . . . . . . . . . 18 12 test information . . . . . . . . . . . . . . . . . . . . . . . . 18 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 14 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 14.1 introduction to soldering . . . . . . . . . . . . . . . . . 20 14.2 wave and re?ow soldering . . . . . . . . . . . . . . . 20 14.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 20 14.4 re?ow soldering . . . . . . . . . . . . . . . . . . . . . . . 21 15 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 22 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . 22 17 legal information. . . . . . . . . . . . . . . . . . . . . . . 23 17.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 23 17.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 17.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 17.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 18 contact information. . . . . . . . . . . . . . . . . . . . . 23 19 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

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